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| SKM150GAL12V Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE 20 V VCES 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 C Tc = 80 C Tj = 125 C Tj = 175 C Tc = 25 C Tc = 80 C 1200 225 170 150 450 -20 ... 20 10 -40 ... 175 189 141 150 IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C 450 900 -40 ... 175 Tc = 25 C Tc = 80 C 189 141 150 IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C 450 900 -40 ... 175 200 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A A A A A C A C V Conditions Values Unit SEMITRANS(R) 2 SKM150GAL12V Target Data Features * VCE(sat) with positive temperature coefficient * High short circuit capability, self limiting to 6 x Icnom * Fast & soft inverse CAL diodes * Large clearance (10 mm) and creepage distances (20 mm) * Isolated copper baseplate using DBC Technology (Direct Copper Bonding) * UL recognized, file no. E63532 IFnom IFRM IFSM Tj Tj = 175 C Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 C Typical Applications* * * * * DC/DC - converter Brake chopper Switched reluctance motor DC - Motor Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 150 A VGE = 15 V chiplevel Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VGE = 15 V VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V Tj = 25 C Tj = 150 C f = 1 MHz f = 1 MHz f = 1 MHz 9 0.89 0.884 1750 5.0 Tj = 25 C Tj = 150 C 6 1.75 2.2 0.94 0.88 5.4 8.8 6.5 0.1 2.2 2.65 1.25 1.22 6.3 9.5 7 0.3 V V V V m m V mA mA nF nF nF nC Conditions min. typ. max. Unit GAL (c) by SEMIKRON Rev. 0 - 23.12.2009 1 SKM150GAL12V Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C IRRM Qrr Err Rth(j-c) IF = 150 A Tj = 150 C di/dtoff = 3100 A/s T = 150 C j VGE = 15 V Tj = 150 C VCC = 600 V per diode Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C rF IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w terminal-chip per module to heat sink M6 to terminals M5 3 2.5 TC = 25 C TC = 125 C 0.65 1 0.04 0.05 5 5 160 30 nH m m K/W Nm Nm Nm g Tj = 25 C Tj = 150 C IF = 150 A Tj = 150 C di/dtoff = 3100 A/s T = 150 C j VGE = 15 V Tj = 150 C VCC = 600 V per Diode 2.1 2.1 1.3 0.9 5.6 7.8 120 31.3 13 0.31 2.14 2.07 1.3 0.9 5.6 7.8 120 31.3 13 0.31 2.46 2.38 1.5 1.1 6.4 8.5 Conditions VCC = 600 V IC = 150 A VGE = 15 V RG on = 0.67 RG off = 0.67 Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C min. typ. max. Unit ns ns 15 mJ ns ns 12 0.19 2.5 2.4 1.5 1.1 6.4 8.5 mJ K/W V V V V m m A C mJ K/W V V V V m m A C mJ K/W SEMITRANS 2 (R) Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0 rF SKM150GAL12V Target Data Features * VCE(sat) with positive temperature coefficient * High short circuit capability, self limiting to 6 x Icnom * Fast & soft inverse CAL diodes * Large clearance (10 mm) and creepage distances (20 mm) * Isolated copper baseplate using DBC Technology (Direct Copper Bonding) * UL recognized, file no. E63532 Freewheeling diode VF = VEC IF = 150 A VGE = 0 V chip VF0 Typical Applications* * * * * DC/DC - converter Brake chopper Switched reluctance motor DC - Motor GAL 2 Rev. 0 - 23.12.2009 (c) by SEMIKRON SKM150GAL12V SEMITRANS 2 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. (c) by SEMIKRON Rev. 0 - 23.12.2009 3 |
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